Third-generation List of semiconductor materials park opens

The project focuses on the 6inch silicon carbide single crystal substrate and epitaxy production line, after full production is expected to reach 6inch silicon carbide single crystal substrate and epitaxy capacity of 100,000 pieces per year and 250,000 pieces per year, respectively.

The project focuses on the 6inch silicon carbide single crystal substrate and epitaxy production line, after full production is expected to reach 6inch silicon carbide single crystal substrate and epitaxy capacity of 100,000 pieces per year and 250,000 pieces per year, respectively.

The project focuses on the 6inch silicon carbide single crystal substrate and epitaxy production line, after full production is expected to reach 6inch silicon carbide single crystal substrate and epitaxy capacity of 100,000 pieces per year and 250,000 pieces per year, respectively.

The project focuses on the 6inch silicon carbide single crystal substrate and epitaxy production line, after full production is expected to reach 6inch silicon carbide single crystal substrate and epitaxy capacity of 100,000 pieces per year and 250,000 pieces per year, respectively.

The project focuses on the 6inch silicon carbide single crystal substrate and epitaxy production line, after full production is expected to reach 6inch silicon carbide single crystal substrate and epitaxy capacity of 100,000 pieces per year and 250,000 pieces per year, respectively.